XPS study of annealing induced effects on surface and interface electronic properties of Si/Ge nanostructures-Reference-Cited by-同舟云学术

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XPS study of annealing induced effects on surface and interface electronic properties of Si/Ge nanostructures

Published:2009-10 Issue:2 Volume:256 Page:489-494
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tripathi S.,Sharma A.,Shripathi T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference18 articles.

1. Silicon:germanium-based mixed-signal technology for optimization of wired and wireless telecommunications

2. Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

3. Deposition of high quality amorphous silicon, germanium and silicon-germanium thin films by a hollow cathode reactive sputtering system

4. Annealing induced interdiffusion and crystallization in sputtered amorphous Si/Ge multilayers

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1. Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique;Scientific Reports;2023-05-09

2. Morphology and structure evolution of multilayered Ge/Si quantum dots grown by magnetron sputtering;Micro & Nano Letters;2023-02

3. Investigation of optical and microstructural properties of RF magnetron sputtered PTFE films for hydrophobic applications;Applied Surface Science;2016-11

4. Diffusion in Metals and Alloys;Physical Metallurgy;2014

5. Energy and angle dependent photoemission study on Si/Ge multilayers using synchrotron radiation;Vacuum;2013-02

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