Nanoscale Pit Formation at 2D Ge Layers on Si: Influence of Energy and Entropy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.103.096101/fulltext
Reference18 articles.
1. Evolution of Thermodynamic Potentials in Closed and Open Nanocrystalline Systems: Ge-Si:Si(001) Islands
2. Three-Dimensional Composition Profiles of Single Quantum Dots Determined by Scanning-Probe-Microscopy-Based Nanotomography
3. Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying
4. Thermodynamics of Coherently-Strained GexSi1-x Nanocrystals on Si(001): Alloy Composition and Island Formation
5. Critical Role of Surface Steps in the Alloying of Ge on Si(001)
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4. Nature of contrast in Ge/Si(111) layers in scanning tunneling microscopy in the presence of Bi and Sb surfactants;JETP Letters;2012-05
5. Ab initiostudy of height contrast in scanning tunneling microscopy of Ge/Si surface layers grown on Si(111) in presence of Bi;Physical Review B;2011-11-14
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