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Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying

  • Published:2005-06-03 Issue:21 Volume:94 Page:
  • ISSN:0031-9007
  • Container-title:Physical Review Letters
  • language:en
  • Short-container-title:Phys. Rev. Lett.

Author:

Denker U.,Rastelli A.,Stoffel M.,Tersoff J.,Katsaros G.,Costantini G.,Kern K.,Jin-Phillipp N. Y.,Jesson D. E.,Schmidt O. G.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

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4. Strain-Engineered Arrays of InAs Quantum Dots on GaAs(001): Epitaxial Growth and Modeling;Nanoscience and Nanotechnology Letters;2017-07-01

5. Surface potential, charging and local current transport of individual Ge quantum dots grown by molecular beam epitaxy;Applied Surface Science;2017-06
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