First-principles study of the stability of theNiSi2/Si(111)interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.8801/fulltext
Reference17 articles.
1. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
2. Energetics of Silicide Interface Formation
3. Origin ofA- orB-typeNiSii2 determined by inin situtransmission electron microscopy and diffraction during growth
4. Geometric structure of the NiSi2Si(111) interface: An X-ray standing-wave analysis
5. Anisotropic broadening of the linewidth in the EPR spectra ofCr3+ions in various doped yttrium aluminum garnet single crystals
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