Energetics of Silicide Interface Formation
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.54.2517/fulltext
Reference25 articles.
1. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
2. Selective growth of metal‐rich silicide of near‐noble metals
3. Structure and Nucleation Mechanism of Nickel Silicide on Si(111) Derived from Surface Extended-X-Ray-Absorption Fine Structure
4. Lattice-Location Experiment of the Ni-Si Interface by Thin-Crystal Channeling of Helium Ions
5. Metal/silicon interface formation: The Ni/Si and Pd/Si systems
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1. Gruneisen parameter and thermal expansion coefficients of NiSi2from first-principles;Journal of Physics D: Applied Physics;2014-06-19
2. Formation of nickel-platinum silicides on a silicon substrate: Structure, phase stability, and diffusion from ab initio computations;Journal of Applied Physics;2013-07-21
3. Study of nickel silicide formation on Si(110) substrate;Applied Surface Science;2011-10
4. Ground state and phonon spectrum of NiSi2;Philosophical Magazine;2011-01-21
5. Surface Cleanness Dependence of the Interfacial Orientation of Endotaxial NiSi[sub 2] on Si(001);Electrochemical and Solid-State Letters;2009
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