Electronic structure and Schottky-barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.11108/fulltext
Reference26 articles.
1. Unpinned Schottky barrier formation at metal–GaAs interfaces
2. Role of photocurrent in low-temperature photoemission studies of Schottky-barrier formation
3. Schottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110)
4. New and unified model for Schottky barrier and III–V insulator interface states formation
5. The advanced unified defect model for Schottky barrier formation
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