Role of photocurrent in low-temperature photoemission studies of Schottky-barrier formation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.7918/fulltext
Reference8 articles.
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2. Reversible temperature-dependent Fermi-level movement for metal-GaAs(110) interfaces
3. Initial stages of Schottky barrier formation: Temperature effects
4. Correlation betweenEFpinning and development of metallic character in Ag overlayers on GaAs(110)
5. Temperature‐dependent pinning at the Al/n‐GaAs(110) interface
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