Reversible temperature-dependent Fermi-level movement for metal-GaAs(110) interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.3483/fulltext
Reference16 articles.
1. Dopant concentration dependences and symmetric Fermi-level movement formetal/n-type andp-type GaAs(110) interfaces formed at 60 K
2. Initial stages of Schottky barrier formation: Temperature effects
3. Trends in temperature-dependent Schottky barrier formation: The Ga/GaAs and Mn/GaAs interfaces
4. Kinetics study of initial stage band bending at metal GaAs(110) interfaces
5. Temperature‐dependent interface morphology and Schottky barrier evolution for Au/InP(110)
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