Cs-induced charge transfer on(2×4)-GaAs(001) studied by photoemission-Reference-Cited by-同舟云学术

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Cs-induced charge transfer on(2×4)-GaAs(001) studied by photoemission

Published:2010-01-06 Issue:3 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Tereshchenko O. E.,Paget D.,Chiaradia P.,Wiame F.,Taleb-Ibrahimi A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.035304/fulltext

Reference29 articles.

1. Layer growth of Cs onSi(100)c(4×2)studied with photoelectron spectroscopy

2. Layer resolved photoemission study of the Cs/Si(111)2×1 interface

3. Photoemission study of alkali/GaAs(110) interfaces

4. Alkali adsorption on GaAs(110): atomic structure, electronic states and surface dipoles

5. Cs bonding at the Cs/GaAs(110) interface

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of excessive Cs and O on activation of GaAs(100) surface: From experiment to theory;Journal of Applied Physics;2020-11-07

2. STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O₂;IEICE Transactions on Electronics;2016

3. In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures;Nanotechnology;2015-03-31

4. Semiconductor-insulator Interfaces, High κ Dielectrics on (In)GaAs;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-04-25

5. Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition;Applied Surface Science;2013-11

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