Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study-Reference-Cited by-同舟云学术

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Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

Published:1985-07-01 Issue:1 Volume:32 Page:23-47
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Stutzmann M.,Jackson W. B.,Tsai C. C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.23/fulltext

Reference90 articles.

1. Thermal properties ofa−Si:Hat low temperatures

2. Electron-spin-lattice relaxation in amorphous silicon and germanium

3. Reversible conductivity changes in discharge‐produced amorphous Si

4. Effect of annealing and light exposure on the field-effect density of states in glow-discharge a-Si: H

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