Volume and composition dependence of direct and indirect band gaps in ordered ternary III-V semiconductor compounds: A screened-exchange LDA study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.4677/fulltext
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1. Universal tight-binding calculation for the electronic structure of the quaternary alloyIn1−xGaxAs1−yPy
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