Local atomic structure in strained interfaces ofInxGa1−xAs/InPheterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.10745/fulltext
Reference44 articles.
1. Heterojunction band offset engineering
2. Theoretical study of band offsets at semiconductor interfaces
3. Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor‐phase epitaxy with 0≤x≤1
4. Role of interface strain in a lattice-matched heterostructure
5. Evidence for intrinsic interfacial strain in lattice-matchedInxGa1−xAs/InP heterostructures
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