Bond-Length Distortions in Strained Semiconductor Alloys-Reference-Cited by-同舟云学术

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Bond-Length Distortions in Strained Semiconductor Alloys

Published:1997-12-22 Issue:25 Volume:79 Page:5026-5029
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Woicik J. C.,Pellegrino J. G.,Steiner B.,Miyano K. E.,Bompadre S. G.,Sorensen L. B.,Lee T.-L.,Khalid S.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.79.5026/fulltext

Reference15 articles.

1. Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure

2. Determination of the lattice constant of epitaxial layers of III-V compounds

3. Microscopic investigation of the strain distribution in InGaAs/GaAs quantum well structures grown by molecular beam epitaxy

4. Structural studies of (Ga,In)(As,P) alloys and (InAs)m(GaAs)n strained-layer superlattices by fluorescence-detected EXAFS

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