Microscopic investigation of the strain distribution in InGaAs/GaAs quantum well structures grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Microscopic investigation of the strain distribution in InGaAs/GaAs quantum well structures grown by molecular beam epitaxy

Published:1993-02 Issue:1-4 Volume:127 Page:592-595
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Proietti M.G.,Martelli F.,Turchini S.,Alagna L.,Bruni M.R.,Prosperi T.,Simeone M.G.,Garcia J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Conservation of bond lengths in strained Ge-Si layers

2. Lattice parameters and local atomic structure of silicon-rich Si-Ge/Si (100) films

3. Structural studies of (Ga,In)(As,P) alloys and (InAs)m(GaAs)n strained-layer superlattices by fluorescence-detected EXAFS

4. Atomic-Scale Structure of Random Solid Solutions: Extended X-Ray-Absorption Fine-Structure Study ofGa1−xInxAs

5. Short‐range‐order structure of an InGaAs compound semiconductor grown by liquid‐phase epitaxy

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1. Local and extended atomic structure of strained polycrystalline In(1-x)Al(x)Sb alloys;Journal of Physics and Chemistry of Solids;2021-03

2. Local structure determination in strained-layer semiconductors;Surface Science Reports;2014-03

3. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05

4. Atomic-resolution study of lattice distortions of buriedInxGa1−xAsmonolayers in GaAs(001);Physical Review B;1999-11-15

5. Bond-length strain in buried Ga1−xInxAs thin-alloy films grown coherently on InP(001);Applied Physics Letters;1998-08-31

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