Bond-length strain in buried Ga1−xInxAs thin-alloy films grown coherently on InP(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122371
Reference20 articles.
1. Determination of the lattice constant of epitaxial layers of III-V compounds
2. Bond-Length Distortions in Strained Semiconductor Alloys
3. Random-cluster calculation of bond lengths in strained-semiconductor alloys
4. Microscopic investigation of the strain distribution in InGaAs/GaAs quantum well structures grown by molecular beam epitaxy
5. Lattice accommodation in heteroepitaxial semiconductor layers grown beyond critical thickness
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