Dipolar interactions between unpaired Si bonds at the(111)Si/SiO2interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.16068/fulltext
Reference28 articles.
1. Structural relaxation ofPbdefects at the (111)Si/SiO2interface as a function of oxidation temperature: ThePb-generation–stress relationship
2. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
3. 29Si hyperfine structure of unpaired spins at the Si/SiO2interface
4. Low‐temperature annealing and hydrogenation of defects at the Si–SiO2 interface
5. Kinetics ofH2passivation ofPbcenters at the (111) Si-SiO2interface
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1. Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface;Applied Physics Letters;2020-02-18
2. Anomalous carbon clusters in 4H-SiC/SiO2 interfaces;Journal of Applied Physics;2019-02-14
3. Multi-frequency electron spin resonance study of inherent Si dangling bond defects at the thermal (211)Si/SiO2interface;physica status solidi (c);2014-08-08
4. Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures;Journal of Applied Physics;2012-10
5. Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance;Applied Physics Letters;2008-09-08
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