Anomalous carbon clusters in 4H-SiC/SiO2 interfaces-Reference-Cited by-同舟云学术

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Anomalous carbon clusters in 4H-SiC/SiO2 interfaces

Published:2019-02-14 Issue:6 Volume:125 Page:065302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kagoyama Y.¹,Okamoto M.²^ORCID,Yamasaki T.³,Tajima N.³,Nara J.³,Ohno T.³,Yano H.¹,Harada S.²,Umeda T.¹

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan

2. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan

3. Computational Materials Science Unit, National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan

Funder

New Energy and Industrial Technology Development Organization

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Council for Science, Technology and Innovation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5066356

Reference26 articles.

1. 1.8 mΩcm², 10 A Power MOSFET in 4H-SiC

2. Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

3. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

4. (Invited) SiC MOS Interface States: Difference between Si Face and C Face

5. Fundamentals of Silicon Carbide Technology

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors;Journal of Applied Physics;2024-07-15

2. Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide;Applied Physics Letters;2023-06-05

3. Conduction mechanism and UV/visible photodetection properties of p-Si/n-SiC heterostructure;Optical and Quantum Electronics;2023-03-01

4. Local capacitance-voltage profiling and deep level transient spectroscopy of SiO2/SiC interfaces by scanning nonlinear dielectric microscopy;Microelectronics Reliability;2022-08

5. Experimental and theoretical studies on atomic structures of the interface states at SiO₂/4H-SiC(0001) interface;Journal of Applied Physics;2022-06-07

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