Elastic relaxation of dry-etched Si/SiGe quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.4825/fulltext
Reference29 articles.
1. Medium‐wavelength, normal‐incidence, p‐type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K
2. Fabrication and characterisation of Si-Si0.7Ge0.3 quantum dot light emitting diodes
3. Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures
4. Electronic-band parameters in strainedSi1−xGexalloys onSi1−yGeysubstrates
5. Raman investigations of elastic strain relief in Si1−xGexlayers on patterned silicon substrate
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