Raman investigations of elastic strain relief in Si1−xGexlayers on patterned silicon substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355335
Reference30 articles.
1. Defects in epitaxial multilayers
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4. Strain relaxation kinetics in Si1−xGex/Si heterostructures
5. Dependence of misfit dislocation velocities upon growth technique and oxygen content in strained GexSi1−x/Si(100) heterostructures
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2. Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy;Journal of Applied Physics;2013-10-28
3. Formation of compressively strained SiGe/Si(110) heterostructures and their characterization;Journal of Crystal Growth;2013-01
4. Layout Scaling of $\hbox{Si}_{1-x}\hbox{Ge}_{x} \hbox{-Channel}$ pFETs;IEEE Transactions on Electron Devices;2011-08
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