Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.2159/fulltext
Reference21 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
2. Piezoresistive effect in wurtzite n‐type GaN
3. Spontaneous polarization and piezoelectric constants of III-V nitrides
4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
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