Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction-Reference-Cited by-同舟云学术

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Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Published:2021-01-11 Issue:2 Volume:29 Page:1824
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Pieniak K.,Chlipala M.^ORCID,Turski H.,Trzeciakowski W.^ORCID,Muziol G.,Staszczak G.,Kafar A.^ORCID,Makarowa I.,Grzanka E.,Grzanka S.,Skierbiszewski C.,Suski T.

Funder

Narodowe Centrum Nauki

Fundacja na rzecz Nauki Polskiej

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference46 articles.

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1. Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides;Materials;2024-08-13

2. Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes;Journal of Information Display;2024-07-13

3. Effects of gamma irradiation on non-polar GaN films deposited on sapphire using pulsed laser deposition;Applied Surface Science;2024-05

4. Atomic layer deposition technology for the development of high-quality, full-colour micro-LED displays;Next Nanotechnology;2024

5. Optimizing performance and energy consumption in GaN(n)/InxGa1-xN/GaN/AlGaN/GaN(p) light-emitting diodes by quantum-well number and mole fraction;Digest Journal of Nanomaterials and Biostructures;2023-12-20

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