Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs-Reference-Cited by-同舟云学术

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Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs

Published:2021-11-23 Issue:25 Volume:29 Page:40804
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Pieniak Katarzyna^ORCID,Trzeciakowski Witold^ORCID,Muzioł Grzegorz,Kafar Anna^ORCID,Siekacz Marcin,Skierbiszewski Czesław,Suski Tadeusz

Funder

Narodowe Centrum Nauki

Fundacja na rzecz Nauki Polskiej

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference26 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. Review—Visible LEDs: More than Efficient Light

3. Review—The Physics of Recombinations in III-Nitride Emitters

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides;Materials;2024-08-13

2. Light emission at reverse voltage in a wide-well (In,Ga)N/GaN light-emitting diode;Physical Review Applied;2024-05-15

3. Recombination kinetics in polar InGaN/GaN structures with wide quantum wells;Novel In-Plane Semiconductor Lasers XXIII;2024-03-13

4. Long-Lived Excitations in Wide (In,Ga)N/GaN Quantum Wells;Physical Review Applied;2023-09-19

5. Transition between quantum confinement and bulklike behavior in polar quantum wells;Physical Review B;2023-07-07

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