Review—Visible LEDs: More than Efficient Light
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference55 articles.
1. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
2. Origin of efficiency droop in GaN-based light-emitting diodes
3. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
4. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency
5. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
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