Theory of electronic and optical properties of bulk AlSb and InAs and InAs/AlSb superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.10782/fulltext
Reference41 articles.
1. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
2. Electrical properties and band offsets of InAs/AlSbn‐Nisotype heterojunctions grown on GaAs
3. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
4. Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modes
5. Interface roughness scattering in InAs/AlSb quantum wells
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