Excitation properties of the divacancy in 4H -SiC-Reference-Cited by-同舟云学术

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Excitation properties of the divacancy in 4H -SiC

Published:2018-11-05 Issue:19 Volume:98 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Magnusson Björn,Son Nguyen Tien,Csóré András,Gällström Andreas,Ohshima Takeshi,Gali Adam,Ivanov Ivan G.

Funder

Vetenskapsrådet

Japan Society for the Promotion of Science

Linköpings Universitet

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.98.195202/fulltext

Reference46 articles.

1. A silicon carbide room-temperature single-photon source

2. Single-photon emitting diode in silicon carbide

3. Coherent control of single spins in silicon carbide at room temperature

4. Isolated electron spins in silicon carbide with millisecond coherence times

5. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin Alignment of NV− Centers in 4H- and 6H-SiC Crystals Induced by IR and Visible Optical Excitation;Applied Magnetic Resonance;2024-08-02

2. Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing;Journal of Semiconductors;2024-07-01

3. Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis);Molecules;2024-06-26

4. Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4 H - and 6 H -SiC;Physical Review B;2024-06-03

5. Defects distribution and evolution in selected-area helium ion implanted 4H–SiC;Ceramics International;2024-03

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