Single-photon emitting diode in silicon carbide
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Link
http://www.nature.com/articles/ncomms8783.pdf
Reference35 articles.
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3. Laube, M. et al. Electrical activation of high concentrations of n+ and p+ ions implanted into 4H–SiC. J. Appl. Phys. 92, 549 (2002).
4. Castelletto, S. et al. A silicon carbide room-temperature single-photon source. Nat. Mater. 13, 151–156 (2014).
5. Widmann, M. et al. Coherent control of single spins in silicon carbide at room temperature. Nat. Mater. 14, 164–168 (2015).
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