Defects distribution and evolution in selected-area helium ion implanted 4H

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Defects distribution and evolution in selected-area helium ion implanted 4H–SiC

Published:2024-03 Issue:5 Volume:50 Page:7691-7701
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Song Ying^ORCID,Xu Zongwei,Rommel Mathias^ORCID,Astakhov Georgy V.^ORCID,Hlawacek Gregor^ORCID,Fang Fengzhou^ORCID

Funder

Ministry of Education of the People's Republic of China

State Administration of Foreign Experts Affairs

Chinesisch-Deutsche Zentrum für Wissenschaftsförderung

Sino-German Center

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference64 articles.

1. A silicon carbide room-temperature single-photon source;Castelletto;Nat. Mater.,2013

2. Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide;Hain;J. Appl. Phys.,2014

3. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide;Fuchs;Nat. Commun.,2015

4. Identification and magneto-optical properties of the NV center in 4H-SiC;von Bardeleben;Phys. Rev. B,2015

5. Efficient generation of an array of single silicon-vacancy defects in silicon carbide;Wang;Phys. Rev. Appl.,2017

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