A carbon–nitrogen complex in gallium phosphide
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.045203/fulltext
Reference15 articles.
1. Optical properties of GaNAs and GaInAsN quantum wells
2. Control of structural defects in group III V N alloys grown on Si
3. Defects in dilute nitrides
4. Minority carrier properties of carbon-doped GaInAsN bipolar transistors
5. Hydrogen in Crystalline Gallium Phosphide
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2. Growth of dilute quaternary alloy InPNBi and its′ characterization;Journal of Crystal Growth;2020-04
3. Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH;Nanoscale Research Letters;2018-12
4. Symmetry and structure of carbon-nitrogen complexes in gallium arsenide from infrared spectroscopy and first-principles calculations;Journal of Applied Physics;2018-04-28
5. Isotopic study of mid-infrared vibrational modes in GaAs related to carbon and nitrogen impurities;physica status solidi (b);2015-03-20
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