Minority carrier properties of carbon-doped GaInAsN bipolar transistors
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=31/a=025/pdf
Reference27 articles.
1. High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base
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4. Heterojunction bipolar transistors implemented with GaInNAs materials
5. Implementation of reduced turn-on voltage InGaP HBTs using graded GaInAsN base regions
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