InGaP HBT technology for RF and microwave instrumentation-Reference-Cited by-同舟云学术

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InGaP HBT technology for RF and microwave instrumentation

Published:1999-08 Issue:8 Volume:43 Page:1437-1444
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Low Tom,Shirley Tim,Hutchinson Craig,Essilfie Gilbert,Whiteley Wes,Yeats Bob,D'Avanzo Don

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Walters P, Lau P, Buehring K, Penney J, Farley C, McDade P, Weller. IEEE GaAs IC Symposium Tech. Digest, 1995. p. 67

2. High-efficiency HBT MMIC linear power amplifier for L-band personal communications systems

3. Willemsen H. IEEE GaAs IC Symposium Tech. Digest, 1996. p. 10

4. Kobayashi, KW, Tran LT, Block T, Cowles J, Oki AK, Streit DC. IEEE GaAs IC Symposium Tech. Digest, 1995. p. 71

5. Sugahara H, Nagano J, Ogawa K. IEEE GaAs IC Symposium Tech. Digest, 1993. p. 115

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1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015

2. Impact of Compositionally Graded Base Regions on the DC and RF Properties of Reduced Turn-On Voltage InGaP–GaInAsN DHBTs;IEEE Transactions on Electron Devices;2004-10

3. Minority carrier properties of carbon-doped GaInAsN bipolar transistors;Journal of Physics: Condensed Matter;2004-07-24

4. Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne;Applied Surface Science;2004-06

5. Etching of As- and P-based III–V semiconductors in a planar inductively coupled BCl3/Ar plasma;Journal of Electronic Materials;2004-04

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