Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne-Reference-Cited by-同舟云学术

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Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne

Published:2004-06 Issue:1-4 Volume:233 Page:402-410
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee J.W,Lim Y.T,Baek I.K,Yoo S.Y,Cho G.S,Jeoin M.H,Leem J.Y,Pearton S.J

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference36 articles.

1. See for example, the Review by S.W. Pang, in: R.J. Shul (Ed.), Handbook of Advanced Plasma Processing, Springer-Verlag, Berlin, 2000.

2. CH4/H2/Ar/Cl2 electron cyclotron resonance plasma etching of via holes for InP-based microwave devices

3. Monitoring InP and GaAs etched in Cl2/Ar using optical emission spectroscopy and mass spectrometry

4. High Aspect Ratio Deep Via Holes in InP Etched Using Cl2 / Ar Plasma

5. Atomic force microscopy study of III–V materials etched using an electron cyclotron resonance source

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of black GaAs by maskless inductively coupled plasma etching in Cl₂/BCl₃/O₂/Ar chemistry;Journal of Vacuum Science & Technology B;2022-03

2. Shunt-Enhanced, Lead-Driven Bifurcation of EEC Sensor Responsivity;IEEE Sensors Journal;2015-10

3. Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication;Japanese Journal of Applied Physics;2011-04-20

4. Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication;Japanese Journal of Applied Physics;2011-04-01

5. Dry etching of GaAs in high pressure, capacitively coupled BCl[sub 3]∕N[sub 2] plasmas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

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