Fabrication of black GaAs by maskless inductively coupled plasma etching in Cl2/BCl3/O2/Ar chemistry-Reference-Cited by-同舟云学术

Fabrication of black GaAs by maskless inductively coupled plasma etching in Cl₂/BCl₃/O₂/Ar chemistry

Published:2022-03 Issue:2 Volume:40 Page:022205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Bao Yidi¹²,Liu Wen¹²,Zhao Yongqiang¹²,Wei Lei¹²,Chen Xiaoling¹³,Yang Fuhua¹²,Wang Xiaodong¹²⁴⁵^ORCID

Affiliation:

1. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

4. Beijing Academy of Quantum Information Sciences, Beijing 100193, China

5. Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China

Funder

National Key Research and Development Program of China

Strategic Priority Research Program of Chinese Academy of Sciences

Scientific Instrument Developing Project of the Chinese Academy of Sciences

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001570

Reference40 articles.

1. Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode

2. High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth

3. Light-trapping structure based on ultra-thin GaAs solar cell

4. Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction

5. Anodically Induced Chemical Etching of GaAs Wafers for a GaAs Nanowire-Based Flexible Terahertz Wave Emitter

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