Anodically Induced Chemical Etching of GaAs Wafers for a GaAs Nanowire-Based Flexible Terahertz Wave Emitter-Reference-Cited by-同舟云学术

Anodically Induced Chemical Etching of GaAs Wafers for a GaAs Nanowire-Based Flexible Terahertz Wave Emitter

Author:

Shin Jeong Ho¹,Rhu Hyun¹,Ji Young Bin²,Oh Seung Jae³,Lee Woo¹⁴^ORCID

Affiliation:

1. Korea Research Institute of Standards and Science (KRISS), Yuseong, Daejeon 34113, Republic of Korea

2. Gimhae Industry promotion & Bio-medical Foundation (GIBF), Gimhae, 50969 Gyeongnam, Republic of Korea

3. YUHS-KRIBB Medical Convergence Research Institute, College of Medicine, Yonsei University, 03722 Seoul, Republic of Korea

4. Department of Nano Science, University of Science and Technology (UST), Yuseong, Daejeon 34113, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference65 articles.

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