Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction-Reference-Cited by-同舟云学术

Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction

Published:2014-01-21 Issue:19 Volume:24 Page:2794-2800
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Luo Lin-Bao¹,Chen Jing-Jing¹,Wang Ming-Zheng¹,Hu Han¹,Wu Chun-Yan¹,Li Qiang¹,Wang Li¹,Huang Jian-An²,Liang Feng-Xia³

Affiliation:

1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices; Hefei University of Technology; Hefei Anhui 230009 PR China

2. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science; City University of Hong Kong; Hong Kong SAR PR China

3. School of Materials Science and Engineering; Hefei University of Technology; Hefei Anhui 230009 PR China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires

2. Graphene Photonics, Plasmonics, and Broadband Optoelectronic Devices

3. Progress in Infrared Photodetectors Since 2000

4. Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire

5. Fast-speed and high-gain photodetectors of individual single crystalline Zn3P2 nanowires

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