CH4/H2/Ar/Cl2 electron cyclotron resonance plasma etching of via holes for InP-based microwave devices
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design of single-ended CPW to rectangular waveguide transition on InP at 300 GHz for 5G applications;Journal of Optical Communications;2023-10-12
2. Resonant cavity assisted broadband CPW to rectangular waveguide transition on InP at 300 GHz;2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz);2021-08-29
3. Design and Fabrication of sub-THz Steerable Photonic Transmitter 1×4 Array for Short-Distance Wireless Links;2021 Joint European Conference on Networks and Communications & 6G Summit (EuCNC/6G Summit);2021-06-08
4. Comparative study of Cl[sub 2], Cl[sub 2]∕O[sub 2], and Cl[sub 2]∕N[sub 2] inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
5. Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl2/N2 and Cl2/Ar Mixtures at Low Bias Power;Journal of the Korean Physical Society;2007-04-14
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