Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl2/N2 and Cl2/Ar Mixtures at Low Bias Power-Reference-Cited by-同舟云学术

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Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl2/N2 and Cl2/Ar Mixtures at Low Bias Power

Published:2007-04-14 Issue:4 Volume:50 Page:1130
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phys. Soc.

Author:

Bae J. W.,Jeong C. H.,Lim J. T.,Lee H. C.,Yeom G. Y.,Adesida I.

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the Indium Compositions in Tri-Gate In_xGa_1−xAs HEMTs for High-Frequency Low Noise Application;ECS Journal of Solid State Science and Technology;2022-11-01

2. The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications;Micromachines;2021-12-10

3. Sidewall Slope Control of InP Via Holes for 3D Integration;Micromachines;2021-01-16

4. Low temperature ICP etching of InP/InGaAsP heterostructure in Cl2-based plasma;Journal of Physics: Conference Series;2019-11-01

5. ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors;Infrared Physics & Technology;2018-05

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