Low temperature ICP etching of InP/InGaAsP heterostructure in Cl2-based plasma

Abstract

Abstract The paper presents the process development results of low temperature ICP etching of InP/InGaAsP heterostructure in a Cl2/Ar/N2 plasma using multi-stage process. It is shown that the introduction of additional polishing etch steps effectively removes defect layer formed after etching of the heterostructure. The angle of inclination of the side walls of the elements formed by etching reached 87°, while the thickness of the defect layer did not exceed 80 nm.