Arsenic adsorption and exchange with phosphorus on indium phosphide (001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.205322/fulltext
Reference29 articles.
1. Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE
2. A scanning tunneling microscopy study of atomic-scale clustering in InAsP/InP heterostructures
3. Atomic-scale compositional structure of InAsP/InP and InNAsP/InP heterostructures grown by molecular-beam epitaxy
4. Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilization
5. Epitaxial regrowth of an InAs surface on InP: An example of artificial surfaces
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