A scanning tunneling microscopy study of atomic-scale clustering in InAsP/InP heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121300
Reference16 articles.
1. Small turn-on delay time in 1.3 mu m InAsP/InP strained double quantum-well lasers with very-low threshold current
2. Multiple quantum well light modulators for the 1.06 μm range on InP substrates: InxGa1−xAsyP1−y/InP, InAsyP1−y/InP, and coherently strained InAsyP1−y/InxGa1−xP
3. Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators
4. Avalanche gain in InAsyP/sub 1-y/ (0.1
5. Band structure engineering of semiconductor lasers for optical communications
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1. Transformation of the InP(001) surface upon annealing in an arsenic flux;Surface Science;2021-08
2. Temperature tuning of the Bragg resonance of InAsP/InP Bragg-spaced quantum wells grown by MOCVD;Optics Communications;2012-11
3. Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells;Semiconductor Science and Technology;2005-04-27
4. Nanoprobing of semiconductor heterointerfaces: quantum dots, alloys and diffusion;Journal of Physics D: Applied Physics;2004-06-17
5. Importance of carrier dynamics and conservation of momentum in atom-selective STM imaging and band gap determination of GaAs(110);Physical Review B;2003-04-29
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