Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux-Reference-Cited by-同舟云学术

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Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux

Published:2021-11 Issue:11 Volume:55 Page:823-827
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Dmitriev D. V.,Kolosovsky D. A.,Fedosenko E. V.,Toropov A. I.,Zhuravlev K. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063782621100080.pdf

Reference25 articles.

1. S. Lee, M. Winslow, C. H. Grein, S. H. Kodati, A. H. Jones, D. R. Fink, P. Das, M. M. Hayat, T. J. Ronningen, J. C. Campbell, and S. Krishna, Sci. Rep. 10, 16735 (2020).

2. J. A. del Alamo, Nature (London, U.K.) 479, 317 (2011).

3. T. Takahashi, Y. Kawano, K. Makiyama, S. Shiba, M. Sato, Y. Nakasha, and N. Hara, IEEE Trans. Electron. Dev. 64, 89 (2017).

4. J. Massies and J. P. Contour, J. Appl. Phys. 58, 386 (1985).

5. G. J. Davies, R. Heckingbottom, H. Ohno, C. E. C. Wood, and A. R. Calawa, Appl. Phys. Lett. 37, 290 (1980).

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1. Homogeneous Array of Nanopits on the Surface of InAlAs Layers Grown by Molecular Beam Epitaxy on an InP (001) Substrate;Optoelectronics, Instrumentation and Data Processing;2024-04

2. Submicron-Size Emitters of the 1.2–1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate;Nanomaterials;2022-11-27

3. Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux;Journal of Physics: Conference Series;2022-03-01

4. Mechanisms of the Oxides Removal from the InP Surface under Annealing in an Arsenic Flux;Optoelectronics, Instrumentation and Data Processing;2021-09

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