Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilization
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 105 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux;Semiconductors;2021-11
2. Mechanisms of the Oxides Removal from the InP Surface under Annealing in an Arsenic Flux;Optoelectronics, Instrumentation and Data Processing;2021-09
3. Transformation of the InP(001) surface upon annealing in an arsenic flux;Surface Science;2021-08
4. Anomalous arsenic diffusion at InGaAs/InP interface;Materials Research Express;2018-12-19
5. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
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