Experimental determination of the conduction-band offset at GaAs/Ga1−xAlxAs heterojunctions with the use of ballistic electrons
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.14693/fulltext
Reference13 articles.
1. Microscopic theory of heterojunction band offsets
2. Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs
3. Reliability of the band discontinuity determination by capacitance-voltage method: Relation of the interface charge density and the trap concentration near the interface
4. Electroluminescence of ballistically injected electrons in AlGaAs/GaAs heterodiodes
5. Ballistic electron luminescence spectroscopy
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