Deep hole traps in Be-doped Al0.5Ga0.5As layers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370907
Reference24 articles.
1. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
2. Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxy
3. Residual oxygen levels in AlGaAs/GaAs quantum‐well laser structures: Effects of Si and Be doping and substrate misorientation
4. Photoluminescence of AlxGa1−xAs alloys
5. Growth Temperature Dependence of Disorderings in a Be-Doped GaAs/AlAs Multilayered Structure
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1. Temperature dependence of Al0.2Ga0.8As X-ray photodiodes for X-ray spectroscopy;Journal of Applied Physics;2017-07-21
2. Low-frequency noise properties of p-type GaAs/AlGaAs heterojunction detectors;Infrared Physics & Technology;2016-09
3. Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE;Nanoscale Research Letters;2011-02-28
4. Deep level defects in proton irradiated p-type Al0.5Ga0.5As;Physica B: Condensed Matter;2009-12
5. Deep hole traps in Be-doped Al0.2Ga0.8As layers grown by molecular beam epitaxy;Physica B: Condensed Matter;2003-12
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