Reliability of the band discontinuity determination by capacitance-voltage method: Relation of the interface charge density and the trap concentration near the interface-Reference-Cited by-同舟云学术

Reliability of the band discontinuity determination by capacitance-voltage method: Relation of the interface charge density and the trap concentration near the interface

Published:1986-08 Issue:1-3 Volume:174 Page:324-330
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Okumura H.,Misawa S.,Yoshida S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference5 articles.

1. Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements

2. Measurement of isotype heterojunction barriers byC‐Vprofiling

3. Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxy

4. Deep levels in In0.53Ga0.47As/InP heterostructures

5. A Capacitance Investigation of InGaAs/InP Isotype Heterojunction

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1. Acoustoelectric Investigation of Deep Centers in Bulk and Multilayered Semiconductors;Communications - Scientific letters of the University of Zilina;2003-06-30

2. Acoustic spectroscopy of deep centres in GaAs/AlGaAs heterostructures;Physica B: Condensed Matter;1999-03

3. Experimental determination of the conduction-band offset at GaAs/Ga1−xAlxAs heterojunctions with the use of ballistic electrons;Physical Review B;1995-11-15

4. Intrinsic origin and composition dependence of deep‐level defects at the inverted GaAs/AlxGa1−xAs interface grown by molecular‐beam epitaxy;Journal of Applied Physics;1995-06

5. Studies of deep-level defects at III–V heterointerfaces;Materials Science and Engineering: B;1994-12