Epitaxial GaAs/AlGaAs core–multishell nanowires with enhanced photoluminescence lifetime-Reference-Cited by-同舟云学术

Epitaxial GaAs/AlGaAs core–multishell nanowires with enhanced photoluminescence lifetime

Author:

Zhou Chen¹²³⁴^ORCID,Zhang Xu-Tao⁵⁶⁷⁸⁹,Zheng Kun¹⁰¹¹¹²⁹,Chen Ping-Ping⁵⁶⁷⁸⁹,Matsumura Syo¹³¹⁴¹⁵¹⁶,Lu Wei⁵⁶⁷⁸⁹,Zou Jin¹²³⁴¹⁷^ORCID

Affiliation:

1. Materials Engineering

2. The University of Queensland

3. Brisbane

4. Australia

5. State Key Laboratory for Infrared Physics

6. Shanghai Institute of Technical Physics

7. Chinese Academy of Sciences

8. Shanghai 200083

9. People's Republic of China

10. Institute of Microstructure and Properties of Advanced Materials

11. Beijing University of Technology

12. Beijing 100124

13. Department of Applied Quantum Physics and Nuclear Engineering

14. Kyushu University

15. Fukuoka 819-0395

16. Japan

17. Centre for Microscopy and Microanalysis

Abstract

The complex GaAs/AlGaAs core–multishell nanowire heterostructure was epitaxially grown, which has a long photoluminescence lifetime.

Funder

Australian Research Council

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference49 articles.

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