Effect of ion bombardment on deep photoluminescence bands inp-type boron-modulation-doped Si layers grown by molecular-beam epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.12006/fulltext
Reference25 articles.
1. Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques
2. Incorporation of accelerated low‐energy (50–500 eV) In+ions in Si(100) films during growth by molecular‐beam epitaxy
3. Potential‐Enhanced Doping of Si Grown by Molecular Beam Epitaxy
4. Secondary implantation of Sb into Si molecular beam epitaxy layers
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