Evolution of photoluminescent defect clusters in proton- and copper-implanted silicon crystals during annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1593801
Reference39 articles.
1. Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon
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5. Interstitial defects on {′113} in Si and Ge Line defect configuration incorporated with a self-interstitial atom chain
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4. Light emitting from the self‐interstitial clusters buried in the Si + self‐ion implanted Si films;Micro & Nano Letters;2017-04
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