Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1357464
Reference41 articles.
1. Si (001) surface defects after extended high temperature annealing
2. Effects of H + , Ar + , and self-ion-irradiation on secondary defects in MeV P + -implanted Si( 100 )
3. A systematic analysis of defects in ion-implanted silicon
4. Depth distribution of secondary defects in 2‐MeV boron‐implanted silicon
5. Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermally stable photoluminescence centers at 1240 nm in silicon obtained by irradiation of the SiO2/Si system;Journal of Applied Physics;2024-06-04
2. Optical properties of multiple energy silicon implantation in silicon films using silicon-on-insulator targets;Optical Materials;2021-06
3. Light emitting from the self‐interstitial clusters buried in the Si + self‐ion implanted Si films;Micro & Nano Letters;2017-04
4. Optical properties and deep levels in annealed Si1−xMnx bulk materials;Solid State Communications;2006-10
5. Photoluminescence enhancement of -FeSi2 by optimizing Al-doping concentration;Physica B: Condensed Matter;2006-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3