Interface defects and their roles in light-induced phenomena in a-Si:H/a-Si1−xNx:H multilayers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.2378/fulltext
Reference15 articles.
1. The nature of interface defects in a-Si:H/a-Si1−x Nx:H multilayers
2. Photoluminescence and optically detected magnetic resonance in a-Si:H/a-Si3N4:H multilayers
3. Interface density of neutral dangling bonds in a-Si:H/a-SiNx:H superlattices
4. Interface defects in a-Si: H/a-Si3N4: H superlattices as elucidated from photothermal deflection spectroscopy measurements
5. Characterization of a-Si:H/a-Si1−xNx:H superlattice films by photoluminescence measurements: The correlation between the preparation condition and the film quality
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Radiative emission properties of a-SiN:H based nanometric multilayers for light emitting devices;Journal of Luminescence;1998-12
2. Frequency resolved spectroscopy in a-Si:H/a-Si1−N :H multilayers and band-edge modulated a-Si1−N :H alloys;Journal of Non-Crystalline Solids;1998-05
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