Characterization of a-Si:H/a-Si1−xNx:H superlattice films by photoluminescence measurements: The correlation between the preparation condition and the film quality
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. Optical Properties of a-Si:H Ultrathin Layers
2. Amorphous Semiconductor Superlattices
3. Luminescence and transport in a-Si:H/a-Si1−xNx:H quantum well structures
4. Properties of amorphous semiconducting multilayer films
5. Quantum wells and superlattices
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical absorption of nanometer-sized band-edge-modulated amorphous silicon–nitrogen films;Materials Science and Engineering: B;2003-01
2. Interface defects and their roles in light-induced phenomena in a-Si:H/a-Si1−xNx:H multilayers;Physical Review B;1997-01-15
3. Photoluminescence and optically detected magnetic resonance in a-Si:H/a-Si3N4:H multilayers;Physical Review B;1997-01-15
4. Temperature dependence of photoluminescence spectra and model of self-trapping of holes in a-Si:H;Journal of Non-Crystalline Solids;1993-12
5. The nature of interface defects in a-Si:H/a-Si1−x Nx:H multilayers;Journal of Non-Crystalline Solids;1991-01
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